NTMFSC011N08M7
On Semiconductor
The ON Semiconductor NTMFSC011N08M7 is an N-Channel MOSFET designed for power applications. It features a low on-resistance and high current handling capability.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,900 pcs
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3900 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Tape & Reel |
The PHB66NQ03LT from NXP Semiconductors is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This component is designed for use in computing, communications, consumer, and industrial applications. It features low conduction losses due to its low on-state resistance, with a typical RDS(on) of 9.1 mΩ at VGS = 10 V and ID = 25 A. The drain-source voltage rating is 25 V, and it can handle a continuous drain current of up to 66 A at Tmb = 25 °C with VGS = 10 V.
This MOSFET is suitable for logic level gate drive sources and is packaged in a SOT404 (D2PAK) surface-mounted plastic package with 3 leads. Key applications include DC-to-DC converters and general-purpose switching. The device operates within a junction temperature range of -55 °C to 175 °C.
| Qty | Low | High |
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| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 25 V.
The drain current (ID) is rated at 66 A under specified test conditions.
It is packaged in a D2PAK surface-mount package.
The typical RDSon is 9.1 mΩ, with a maximum of 10.5 mΩ at VGS = 10 V and ID = 25 A.
The maximum gate-source voltage (VGS) is 20 V.
The maximum total power dissipation is 93 W at 25°C.
RoHS compliance status is unverified.
