| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,226,020 pcs
|
3226020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
24,000 pcs
|
24000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request |
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The NXP Semiconductors NX7002AK.215 is a single N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
This MOSFET features a drain-source voltage rating of 60V and a gate-source voltage rating of ±20V. It offers a typical drain current of 300mA at 10V VGS and 25°C case temperature, with a maximum drain-source on-state resistance of 4.5Ω at 10V VGS and 100mA ID. The device is ESD protected.
Key applications for the NX7002AK.215 include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. Its small package size and performance characteristics make it suitable for various electronic designs requiring efficient power switching.
The device operates within a junction temperature range of -55°C to 150°C and a storage temperature range of -65°C to 150°C. It is supplied in a TO-236AB package suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The gate-source voltage rating is ±20V.
The typical drain-source on-state resistance is 3Ω.
The NX7002AK.215 is supplied in a TO-236AB (SOT23) surface-mount package.