PDTC114EU,115
Nexperia USA Inc.
The Nexperia PDTC114EU,115 is an NPN pre-biased transistor designed for digital applications. It features a 50V collector-emitter voltage and 100mA output current capability.
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94,552 pcs
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94552 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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57,000 pcs
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57000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The PDTC144ET is a bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. It is designed for use in switching and amplification circuits. The transistor has a collector-emitter voltage (Vce) of at least 50V under test conditions of IC = 100mA and IB = 5mA. Its collector current (Ic) is limited to a maximum of 100mA, with a collector-emitter saturation voltage (Vce(sat)) of 0.3V at IC = 100mA and IB = 5mA. The device features a high DC current gain (hFE) minimum of 100 at IC = 10mA and Vce = 5V, with a typical value of 250. It is packaged in a SOT-323 surface-mount package, suitable for compact electronic designs. The maximum power dissipation is 200mW at 25°C, and it can operate at ambient temperatures up to 150°C.
| Qty | Low | High |
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| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vce) is 50 V.
It is available in a SOT-323 surface-mount package.
The maximum collector current is 100 mA.
The maximum power dissipation is 200 mW at 25°C.