| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,381,020 pcs
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1381020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN resistor-equipped transistor (RET) from Nexperia is designed for digital applications in the automotive and industrial segments. It offers a 50V collector-emitter voltage and a 100mA output current capability, simplifying circuit design with its built-in bias resistors.
The PDTC143ZU,115 is housed in a compact SOT-323 (SC-70) surface-mount package, making it suitable for space-constrained designs. Key electrical characteristics include a typical R1 bias resistor of 4.7 kΩ and a typical R2/R1 bias resistor ratio of 10. The device also boasts a typical Vce Saturation of 100mV at 250µA/5mA and a minimum DC current gain of 100 at 10mA/5V.
This component serves as a cost-saving alternative for BC847/857 series in digital applications, reducing component count and pick-and-place costs. Its AEC-Q101 qualification further underscores its suitability for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTC143ZU,115 is 50V.
The PDTC143ZU,115 transistor has a maximum output current (IO) of 100 mA.
The PDTC143ZU,115 is available in SOT-323 and SC-70 packages.
The PDTC143ZU,115 has a typical R1 bias resistor of 4.7 kΩ and a typical R2/R1 bias resistor ratio of 10.
The minimum DC current gain (hFE) for the PDTC143ZU,115 is 100 at 10mA collector current and 5V collector-emitter voltage.