| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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598,020 pcs
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598020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,557 pcs
|
2557 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Nexperia PDTC114YT,215 is a pre-biased NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is packaged in a TO-236AB (SOT-23) surface mount package, making it convenient for compact designs.
The transistor offers a maximum power dissipation of 250 mW and can handle up to 100 mA of current with a collector-emitter voltage of 50 V. It includes an integrated resistor with a value of 47 kΩ, simplifying circuit design by eliminating the need for an external bias resistor. The DC current gain (hFE) is a minimum of 100 at 5mA collector current and 5V collector-emitter voltage, with a saturation voltage (Vce) of 100mV maximum at 250µA base current and 5mA collector current.
Its surface mount capability and pre-biased design make it a practical choice for applications requiring a simple and reliable NPN transistor solution. The RoHS3 compliant status indicates adherence to environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PDTC114YT,215 transistor has a voltage rating of 50 V.
The continuous collector current for the PDTC114YT,215 is 100 mA.
The power dissipation of the PDTC114YT,215 transistor is 250 mW.
The PDTC114YT,215 transistor is supplied in a TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3.
The PDTC114YT,215 transistor has an integrated resistor value of 47 kΩ.
The minimum DC current gain (hFE) for the PDTC114YT,215 is 100 at 5mA collector current and 5V collector-emitter voltage.
The maximum Vce saturation for the PDTC114YT,215 is 100mV at 250µA base current and 5mA collector current.