| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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420,000 pcs
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420000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request |
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The Nexperia PDTC123JT-QVL is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It comes in a compact SOT23 (TO-236AB) surface-mounted device plastic package.
Key electrical specifications include a collector-emitter voltage of 50V and an output current capability of 100mA. This pre-biased transistor simplifies circuit design by incorporating built-in bias resistors, reducing component count and pick-and-place costs. The typical bias resistor R1 is 2.2 kΩ, and the R2/R1 ratio is typically 21.
With a power dissipation rating of 250 mW at 25°C ambient temperature, the PDTC123JT-QVL is suitable for various switching load and IC input control applications. It is qualified according to AEC-Q101, making it recommended for use in automotive environments. The device offers a typical saturation voltage of 100mV at 250µA base current and 5mA collector current, and a frequency response up to 230 MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50V.
The output current capability is 100mA.
The PDTC123JT-QVL is supplied in a SOT-23 package.
The power dissipation is 250 mW at 25°C ambient temperature.
The typical bias resistor R1 value is 2.2 kΩ.
The typical bias resistor ratio R2/R1 is 21.
Yes, the PDTC123JT-QVL is qualified according to AEC-Q101 and recommended for use in automotive applications.