| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,498,020 pcs
|
25498020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
75,000 pcs
|
75000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request |
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The NXP Semiconductors PDTC114ET215 is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in the automotive and industrial segments. This series offers built-in bias resistors, simplifying circuit design and reducing component count and pick-and-place costs.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and an output current (IO) capability of 100 mA. The integrated bias resistors have a typical value of 10 kΩ for R1 (input) and a typical ratio of 1.0 for R2/R1. This configuration makes it a cost-saving alternative for standard BC847/857 series in digital applications.
The PDTC114ET215 is housed in a small SOT23 surface-mounted device (SMD) plastic package, suitable for automated assembly processes. Its design facilitates control of IC inputs and switching loads, offering a simplified solution for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50V.
The maximum output current (IO) is 100 mA.
The R1 bias resistor (input) is typically 10 kΩ, with an R2/R1 ratio typically of 1.0.
The PDTC114ET215 is in a SOT23 surface-mount package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.