| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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61,020 pcs
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61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PDTC114TT,215 from Nexperia is an NPN Resistor-Equipped Transistor (RET) designed to simplify circuit design and reduce component count. This device features built-in bias resistors, specifically a 10 kΩ input resistor (R1) with R2 open, and offers an output current capability of 100 mA.
With a collector-emitter voltage (VCEO) of 50V, this transistor is suitable for digital applications, controlling IC inputs, and switching loads. It provides a cost-saving alternative for BC847 series in digital applications. The transistor type is NPN - Pre-Biased, with a typical DC current gain (hFE) of 200 at 1mA and 5V. The saturation voltage (Vce Sat) is a maximum of 150mV at 500µA and 10mA.
The PDTC114TT,215 is available in a surface mount package, specifically the TO-236-3, SC-59, SOT-23-3 (TO-236AB) case. Its power dissipation is rated at 250 mW. The mounting type is Surface Mount, making it suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTC114TT,215 is 50V.
The output current capability (IO) is 100 mA.
The input bias resistor (R1) has a typical value of 10 kΩ.
The PDTC114TT,215 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The PDTC114TT,215 transistor is a surface mount device.
The minimum DC current gain (hFE) is 200 at 1mA and 5V.
The Vce Saturation voltage is a maximum of 150mV at 500µA and 10mA.