PDTB123YT-QR
Nexperia USA Inc.
The Nexperia USA Inc. PDTB123YT-QR is a PNP Resistor-Equipped Transistor (RET) in a SOT23 package. It offers a 50V collector-emitter voltage and 500mA output current capability.
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1,111,020 pcs
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1111020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PDTB123YT,215 is a PNP Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. This component features built-in bias resistors, simplifying circuit design and reducing component count.
Key electrical specifications include a collector-emitter voltage (VCEO) of -50V and a maximum DC output current (IO) of -500mA. The integrated bias resistors have a typical value of R1 = 2.2 kΩ and a typical R2/R1 ratio of 4.55. The transistor type is PNP with a pre-biased configuration.
This device is housed in a TO-236AB (SOT-23) surface mount package, making it suitable for automated assembly processes. It offers a power dissipation of 250 mW. The PDTB123YT,215 is a cost-saving alternative for certain digital applications.
Applications include controlling IC inputs and switching loads. The built-in resistors simplify circuit design and reduce pick and place costs.
| Qty | Low | High |
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| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-50 V
-500 mA
TO-236-3, SC-59, SOT-23-3
Surface Mount
2.2 kΩ
4.55