| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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52,020 pcs
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52020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia USA Inc. PDTB123YT-QR is a PNP Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, simplifying circuit design and reducing component count. This transistor has a 50V collector-emitter voltage rating and a 500mA output current capability.
The PDTB123YT-QR is housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It includes integrated bias resistors with a typical value of 2.2 kΩ for R1 and a resistor ratio tolerance of ±10%. The device is qualified according to AEC-Q101 and recommended for automotive applications, offering a cost-saving alternative for BC807 series in digital applications.
Key electrical characteristics include a typical R1 bias resistor value of 2.2 kΩ and a typical R2/R1 bias resistor ratio of 4.55. The maximum power dissipation is 250 mW at an ambient temperature of 25°C. The transistor type is PNP - Pre-Biased, with a Vce Saturation of 300mV at 2.5mA/50mA and a DC Current Gain (hFE) of 70 minimum at 50mA/5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTB123YT-QR is -50 V.
The maximum output current (IO) for the PDTB123YT-QR is 500 mA.
The typical R1 bias resistor value in the PDTB123YT-QR is 2.2 kΩ.
The PDTB123YT-QR is available in a SOT23 package.
The RoHS status of the PDTB123YT-QR is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the PDTB123YT-QR is 1 Unlimited.
The REACH status for the PDTB123YT-QR is REACH Unaffected.