| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| Tape & Reel |
The PDTA123EM,315 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This component is designed for surface mount applications and comes in a compact SOT-883 package.
Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. The power dissipation is rated at 250mW. These specifications make it suitable for various switching and amplification tasks in electronic circuits.
The transistor is specified with a RoHS3 compliant status, an MSL 1 Unlimited rating, and is REACH unaffected. The lead time is noted as 5 weeks from the manufacturer.
This component is part of the Discrete Semiconductor Products category, specifically within the Transistors - Bipolar (BJT) - Single, Pre-Biased subcategory.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The continuous collector current is 100mA.
The power dissipation is 250mW.
The PDTA123EM,315 is supplied in a SOT-883 package.
The mounting type is Surface Mount.