| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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514,410 pcs
|
514410 pcs | On Request | 1 | On Request | On Request | 1731+ | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,240 pcs
|
1240 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
205 pcs
|
205 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Nexperia PBSS4350Z is a versatile NPN low VCEsat transistor designed for various power management applications. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of up to 3A, with a peak current capability (ICM) of 5A.
This transistor boasts a low collector-emitter saturation voltage (RCEsat) of typically 110mΩ at 2A, contributing to higher efficiency and reduced heat generation. The DC current gain (hFE) is a minimum of 200 at 500mA.
Packaged in a surface-mountable SOT223 (SC-73) plastic package, the PBSS4350Z is suitable for applications such as DC/DC converters, supply line switching, battery chargers, linear voltage regulation, and driving inductive loads like relays and motors.
Key electrical parameters include a collector-base voltage (VCBO) of 60V and an emitter-base voltage (VEBO) of 6V. Thermal considerations include a maximum junction temperature of 150°C and power dissipation ratings dependent on mounting conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS4350Z is 50V.
The continuous collector current (IC) rating of the PBSS4350Z is 3A.
The typical collector-emitter saturation resistance (RCEsat) at 2A is 110mΩ.
The minimum DC current gain (hFE) at 500mA is 200.
The PBSS4350Z is available in the SOT223 surface-mount package.
