| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,760 pcs
|
2760 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,606 pcs
|
1606 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The Nexperia NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
Key electrical specifications include a drain-source voltage of -20V and a continuous drain current of -2A at 25°C with a gate-source voltage of -4.5V. The drain-source on-state resistance (RDSon) is a maximum of 120mΩ under the same conditions. It is rated for a low voltage gate drive with 1.8V RDSon.
This MOSFET is designed for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. Its AEC-Q101 qualification indicates suitability for demanding automotive environments.
The device features very fast switching capabilities and is mounted using surface-mount technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
-2 A
120 mΩ
SOT23
Yes