| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
195,000 pcs
|
195000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,710 pcs
|
1710 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
42 pcs
|
42 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAV23C from NXP Semiconductors is a dual high-voltage switching diode designed for high-speed switching applications at elevated voltages. Encapsulated in a compact SOT23 (TO-236AB) surface-mounted device plastic package, this diode offers a repetitive peak reverse voltage (VRRM) of up to 250 V.
Key electrical characteristics include a low leakage current, a reverse recovery time (trr) of 50 ns, and a low capacitance (Cd) of 2 pF. The device is rated for a maximum forward current of 225 mA (single diode loaded) and a total power dissipation of 250 mW at 25°C ambient temperature.
Applications for the BAV23C include high-voltage general-purpose switching and high-speed switching circuits where reliability and performance are critical. Its small SMD package makes it suitable for space-constrained designs.
Mounting is via surface mount technology. The diode features a common cathode configuration with two separate anode terminals.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage (VRRM) for the BAV23C is 250 V.
The reverse recovery time (trr) is 50 ns under the specified conditions.
The maximum forward current is 225 mA when a single diode is loaded, and 125 mA when both diodes are loaded.
The BAV23C is supplied in a SOT23 surface-mounted device plastic package.
The BAV23C is used for high-speed switching at high voltage and high-voltage general-purpose switching.