PESD5V0S2BT
NXP Semiconductors
The NXP Semiconductors PESD5V0S2BT is a low capacitance bidirectional double ESD protection diode designed to protect two data lines. It offers robust ESD protection up to 30 kV.
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150,667 pcs
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150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BSP61 is a PNP Darlington transistor designed for industrial switching applications. It comes in a compact SOT223 plastic package, suitable for surface mounting.
Key electrical characteristics include a high collector current of -1 A and a collector-emitter voltage of -60 V. The transistor also features an integrated diode and resistor, simplifying circuit design. Its high DC current gain (hFE) of 1000 at VCE = -10 V and IC = -150 mA makes it suitable for driving loads like solenoids, relays, and print hammers.
With AEC-Q101 qualification, the BSP61 is built for reliability in demanding environments. The SOT223 package offers good thermal performance, with a total power dissipation of 1.25 W at 25°C ambient temperature when mounted on a 1 cm² FR4 PCB.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
-80 V
-60 V
-1 A continuous, -2 A peak
Minimum 1000 at VCE = -10 V, IC = -150 mA
SOT223 (SC-73) surface mount
150 °C