| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
|
16 pcs | On Request | 1 | 30 | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The NVTFS4C25N is a power MOSFET from On Semiconductor designed for efficient power management. This N-channel device features a low RDS(on) of 17 mOhm at 10V, minimizing conduction losses. It is optimized for low gate charge to reduce driver losses and switching losses.
The MOSFET has a maximum drain-to-source voltage (Vds) of 30V and can handle a continuous drain current (Id) of up to 22.1A at a case temperature of 25°C. Power dissipation is rated at 14.3W at 25°C case temperature.
It is supplied in a WDFN8 package suitable for surface mounting. The device is Pb-free and halogen-free, complying with RoHS standards. The NVTFS4C25N is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
Key electrical characteristics include a gate-to-source voltage (Vgs) of ±20V, a source current (body diode) of 14A, and a single pulse drain-to-source avalanche energy (EAS) of 11.2 mJ. The operating junction and storage temperature range is -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.19 | $7.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) for the NVTFS4C25N is 30V.
The NVTFS4C25N has a maximum continuous drain current of 22.1A at a case temperature of 25°C.
The typical on-resistance (RDS(on)) for the NVTFS4C25N is 17 mOhm at a gate-to-source voltage of 10V.
The NVTFS4C25N is available in a WDFN8 package.
Yes, the NVTFS4C25N is AEC-Q101 qualified.