NVTFS4C25N The NVTFS4C25N is an N-Channel MOSFET from On Semiconductor. It offers a 30V drain-to-source voltage and a continuous drain current of up to 22.1A.
Mfr Part #:

NVTFS4C25N

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVTFS4C25N is an N-Channel MOSFET from On Semiconductor. It offers a 30V drain-to-source voltage and a continuous drain current of up to 22.1A.
✓ Total Stock: 16 pcs
$ Price Range: $7.19

NVTFS4C25N Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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16 pcs
16 pcs On Request 1 30 On Request On Request On Request On Request

NVTFS4C25N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Tape & Reel

NVTFS4C25N Description

Short technical summary and product information.

The NVTFS4C25N is a power MOSFET from On Semiconductor designed for efficient power management. This N-channel device features a low RDS(on) of 17 mOhm at 10V, minimizing conduction losses. It is optimized for low gate charge to reduce driver losses and switching losses.

 

The MOSFET has a maximum drain-to-source voltage (Vds) of 30V and can handle a continuous drain current (Id) of up to 22.1A at a case temperature of 25°C. Power dissipation is rated at 14.3W at 25°C case temperature.

 

It is supplied in a WDFN8 package suitable for surface mounting. The device is Pb-free and halogen-free, complying with RoHS standards. The NVTFS4C25N is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

 

Key electrical characteristics include a gate-to-source voltage (Vgs) of ±20V, a source current (body diode) of 14A, and a single pulse drain-to-source avalanche energy (EAS) of 11.2 mJ. The operating junction and storage temperature range is -55°C to +175°C.

NVTFS4C25N Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NVTFS4C25N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVTFS4C25N Estimated Pricing

Qty Low High
1+ $7.19 $7.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFS4C25N Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Low on-resistance of 17 mOhm at 10V.
  • High continuous drain current up to 22.1A.
  • Optimized for low conduction and switching losses.
  • AEC-Q101 qualified for automotive applications.

NVTFS4C25N Applications

  • Suitable for power switching applications.
  • Ideal for automotive power management.
  • Used in low-loss power conversion circuits.
  • Efficient for general purpose switching.

NVTFS4C25N FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVTFS4C25N?

The maximum drain-to-source voltage (Vds) for the NVTFS4C25N is 30V.

What is the maximum continuous drain current of the NVTFS4C25N?

The NVTFS4C25N has a maximum continuous drain current of 22.1A at a case temperature of 25°C.

What is the typical on-resistance (RDS(on)) for the NVTFS4C25N?

The typical on-resistance (RDS(on)) for the NVTFS4C25N is 17 mOhm at a gate-to-source voltage of 10V.

What package type is the NVTFS4C25N available in?

The NVTFS4C25N is available in a WDFN8 package.

Is the NVTFS4C25N AEC-Q101 qualified?

Yes, the NVTFS4C25N is AEC-Q101 qualified.

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