NTMFSC011N08M7
On Semiconductor
The ON Semiconductor NTMFSC011N08M7 is an N-Channel MOSFET designed for power applications. It features a low on-resistance and high current handling capability.
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105,000 pcs
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105000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NVMFS5832NLT1G is a single N-Channel Power MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage of 40V and can handle a continuous drain current of up to 120A at 25°C case temperature, with a maximum continuous drain current of 21A at 25°C ambient temperature. The MOSFET offers low on-resistance, with a maximum of 4.2 mΩ at 10V gate-to-source voltage, minimizing conduction losses.
Designed for compact applications, this device comes in a small 5x6 mm footprint (SO-8FL package) with surface mount capability. It boasts AEC-Q101 qualification and PPAP capability, making it suitable for demanding automotive and industrial applications. The operating junction and storage temperature range is from -55°C to +175°C.
Key electrical characteristics include a gate-to-source voltage of ±20V and a pulsed drain current of up to 557A. Thermal performance is supported by a junction-to-mounting board thermal resistance of 1.2 °C/W and a junction-to-ambient thermal resistance of 40 °C/W. The device is Pb-free and RoHS compliant.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The maximum continuous drain current at 25°C case temperature is 120A.
The maximum on-resistance at 10V gate-to-source voltage is 4.2 mΩ.
The NVMFS5832NLT1G uses the SO-8FL package.
Yes, the NVMFS5832NLT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
