NTMFSC011N08M7
On Semiconductor
The ON Semiconductor NTMFSC011N08M7 is an N-Channel MOSFET designed for power applications. It features a low on-resistance and high current handling capability.
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135 pcs
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135 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVMFS5826NLT1G is an N-Channel Power MOSFET designed by On Semiconductor. This component features a drain-to-source voltage of 60V and a continuous drain current rating of 26A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance (RDS(on)) of 24 mΩ at 10V gate-source voltage. The device also offers a pulsed drain current of up to 130A and a source current of 32A.
Designed for compact applications, this MOSFET comes in a small footprint 5x6 mm package (SO8FL). It is AEC-Q101 qualified and RoHS compliant, making it suitable for various automotive and industrial applications where reliability and performance are critical.
The operating junction and storage temperature range is from -55°C to +175°C. Thermal resistance from junction-to-mounting board is 3.9 °C/W, and junction-to-ambient is 42 °C/W.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60 V.
The continuous drain current is 26 A at 25°C case temperature.
The maximum on-state resistance is 24 mΩ at 10V gate-source voltage.
The package type is DFN5 (SO-8FL).
Yes, the NVMFS5826NLT1G is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
