CSD75207W15
Texas Instruments
Dual P-channel MOSFET with 20V drain-source voltage, 3.9A drain current, and low on-resistance of 27mΩ at 4.5V. Housed in a compact 9-DSBGA package.
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418,240 pcs
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418240 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTTFS5C658NLTAG from On Semiconductor is a single N-Channel Power MOSFET. It is designed for compact applications with a small footprint of 3.3 x 3.3 mm.
Key electrical characteristics include a maximum drain-to-source voltage of 60V and a low on-state resistance (RDS(on)) of 5.0 mΩ at a gate-source voltage of 10V. It can handle a continuous drain current of up to 109A at 25°C case temperature, with a pulsed drain current rating of 440A. The device operates within a junction and storage temperature range of -55°C to +175°C.
This MOSFET features low capacitance to minimize driver losses and is constructed with Pb-Free and RoHS compliant materials. It is housed in a WDFN8 package suitable for surface mounting.
Applications for this MOSFET include power switching and general-purpose power management where high efficiency and compact design are required.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
The maximum on-resistance is 5.0 mΩ at a gate-source voltage of 10V.
The continuous drain current rating is 109A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to +175°C.
The NTTFS5C658NLTAG is supplied in a WDFN8 package.
Yes, the NTTFS5C658NLTAG is RoHS3 Compliant.
