SI4953DY-T1-GE3
Vishay
The Vishay Dale SI4953DY-T1-GE3 is a dual P-channel MOSFET with a 30V drain-source voltage and 3.7A continuous drain current. It features a low on-resistance of 53 mOhm at 4.9A and 10V.
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE2990 is a P-Channel MOSFET manufactured by NTE Electronics. This component is designed for various electronic applications requiring a MOSFET with a Drain-Source Voltage rating of 250V.
Key electrical and thermal specifications include a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is housed in a TO-220 package, suitable for through-hole mounting.
This MOSFET is part of the broader category of discrete semiconductor products. Its specifications make it a potential candidate for power switching and amplification circuits where a P-Channel enhancement-mode MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 250V.
The maximum operating temperature is 150°C.
The minimum operating temperature is -55°C.
The NTE2990 is available in a TO-220 package.
The NTE2990 is a through-hole mount component.
