BSC076N06NS3 G
Infineon Technologies
The Infineon Technologies BSC076N06NS3 G is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and a low on-resistance.
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation | |
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The NTE2923 is an N-Channel Power MOSFET designed for high-voltage switching applications. It features a drain-to-source breakdown voltage of 500V (minimum) and a continuous drain current rating of 8.8A at 25°C case temperature. The static drain-to-source on-resistance is typically 0.85 Ohms at VGS = 10V, enabling efficient power handling.
This device offers a gate threshold voltage range of 2V to 4V and a forward transconductance of 5.3 mhos (minimum). It is capable of handling pulsed drain currents up to 35A and single pulse avalanche energy up to 480mJ. The operating junction temperature range is -55°C to +150°C.
The NTE2923 is housed in a TO247 package, suitable for through-hole mounting. Thermal resistance from junction to case is typically 0.83°C/W, and from junction to ambient is 40°C/W. The maximum power dissipation is 150W at 25°C case temperature, derated linearly above 25°C at 1.2W/°C.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-to-source breakdown voltage is 500V.
The continuous drain current is 8.8A at 25°C case temperature and 5.6A at 100°C.
The typical static drain-to-source on-resistance is 0.85 Ohms at VGS = 10V.
The NTE2923 is housed in a TO247 package.
The operating junction temperature range is -55°C to +150°C.
