BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA1943-O is a PNP bipolar junction transistor (BJT) suitable for high-power amplification applications. It is housed in a TO-3PL package and offers a collector-emitter breakdown voltage (Vceo) of 230V and a continuous collector current (Ic) of 15A. With a power dissipation (Pd) of 150W, this transistor is designed for demanding audio power amplifier output stages and other circuits requiring significant current handling capabilities with low distortion.
Key electrical characteristics include a typical DC current gain (hFE) of 80 at 1A and 5V, and a typical collector-emitter saturation voltage (Vce(sat)) of 1.5V at 8A and 800mA. The transition frequency (fT) is 30MHz, and the collector cut-off current (Icbo) is 5uA.
This component is typically used in the output stages of audio amplifiers, finding application in both consumer and professional audio equipment. Its robust specifications make it suitable for designs where high current output and reliability are paramount. Proper heat sinking and biasing are essential for optimal performance and longevity, especially in high-power applications.
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| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) of the 2SA1943-O transistor is 230V.
The maximum continuous collector current (Ic) for the 2SA1943-O is 15A.
The power dissipation (Pd) rating for the 2SA1943-O transistor is 150W.
The typical DC current gain (hFE) of the 2SA1943-O at 1A and 5V is 80.
The 2SA1943-O transistor comes in a TO-3PL package.
The RoHS status of the 2SA1943-O is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SA1943-O is 1 Unlimited.