TC551001BFL70
Toshiba
The Toshiba TC551001BFL70 is a general-purpose Static RAM with a 70ns maximum access time and a 5.0V nominal supply voltage. It features a 32-pin SO package.
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Power Dissipation |
The NTE13 is a Silicon NPN Transistor manufactured by NTE Electronics, suitable for low voltage output amplification applications. It offers a low collector-emitter saturation voltage and high DC current gain, making it efficient for various electronic circuits.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 20V and a continuous Collector Current (IC) of 500mA. The transistor operates with a DC Current Gain (hFE) ranging from 400 to 800 at 2V VCE and 500mA IC. Its transition frequency (fT) is 200MHz.
The component is housed in an M Type Mold package, designed for equipment downsizing and automatic insertion. Absolute maximum ratings include a Collector-Base Voltage (VCBO) of 25V and an Emitter-Base Voltage (VEBO) of 12V. The operating junction temperature can reach up to +150°C, with a storage temperature range of -55°C to +150°C.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the NTE13 transistor is 20V.
The continuous Collector Current (IC) rating for the NTE13 is 500mA.
The typical DC Current Gain (hFE) of the NTE13 at 2V VCE and 500mA IC is between 400 and 800.
The operating junction temperature for the NTE13 is up to +150°C.
The NTE13 transistor uses an M Type Mold package.
