| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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36,160 pcs
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36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Write Cycle Time |
The Toshiba TC551001BFL70 is a CMOS Static Random Access Memory (SRAM) designed for general-purpose applications. It operates with a nominal supply voltage of 5.0V and offers a fast maximum access time of 70ns.
This component has a memory organization of 128k words by 8 bits per word. The output configuration is 3-state, and it has a maximum power dissipation of 600mW. The TC551001BFL70 comes in a 32-pin SO package.
Key electrical characteristics include a minimum write cycle time of 70ns. The technology used is CMOS, ensuring efficient operation. This memory component is suitable for various embedded systems and data storage applications where reliable and fast memory access is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 5.0V.
The maximum access time is 70ns.
The minimum write cycle time is 70ns.
The maximum power dissipation is 600mW.
It is organized as 128k words of 8 bits each (128k x 8).
The outputs are 3-state.
It is available in a 32-pin SO (Small Outline) package.