NX7002AK.215
NXP Semiconductors
The NXP Semiconductors NX7002AK.215 is a single N-channel Trench MOSFET designed for switching applications. It offers a 60V drain-source voltage and utilizes Trench MOSFET technology.
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The NTD4909NAT4H from On Semiconductor is a single N-channel MOSFET designed for various applications. It offers a maximum drain-source voltage of 30V and a continuous drain current of 41A. The MOSFET exhibits a low on-resistance (Rds On) of typically 8mOhm, contributing to efficient power handling.
This component is housed in a DPAK surface-mount package, making it suitable for space-constrained designs. Its specifications suggest suitability for switching and amplification tasks where high current and moderate voltage are required.
As an NFET, it operates by controlling the flow of current between the drain and source terminals via the gate voltage. The low Rds On minimizes power loss during conduction, which is critical in power management circuits. The DPAK package provides good thermal performance for its size.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum drain current is 41A.
The typical on-resistance is 8 milliohm.
It comes in a DPAK surface mount package.
RoHS compliance status is unverified.
