| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,642,500 pcs
|
1642500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,580 pcs
|
2580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The NVMFS5C430NLWFT1G is a power MOSFET from ON Semiconductor, designed for efficient power management applications. This N-Channel device features a maximum drain-to-source voltage of 40V and can handle a continuous drain current of up to 200A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 1.5mOhm at 50A and 10V gate-source voltage, minimizing conduction losses. The gate charge is 70nC at 10V, contributing to reduced driver losses. It operates within a wide temperature range of -55°C to 175°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, this MOSFET is suitable for compact designs. It offers a power dissipation of 110W at 25°C case temperature and 3.8W at 25°C ambient temperature. The device is AEC-Q101 qualified and RoHS compliant.
This MOSFET is ideal for applications requiring high current handling and low on-state resistance in a small footprint. Its robust design and specifications make it suitable for various power switching and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40 V.
The continuous drain current is 200 A at 25°C case temperature.
The maximum on-resistance is 1.5mOhm at 50A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead (5x6mm) package.
Yes, this device is RoHS Compliant.