| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,260 pcs
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2260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSVMMUN2217LT1G from ON Semiconductor is an NPN Bias Resistor Transistor (BRT) designed to replace a single transistor and its external bias network. This integration simplifies circuit design, reduces component count, and saves board space.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 50 Vdc and a continuous Collector Current (IC) of 100 mAdc. The device has a minimum DC Current Gain (hFE) of 35 at 5mA and 10V, and a Vce Saturation (Max) of 250mV at 1mA and 10mA. It incorporates a base-emitter resistor (R2) of 10 kΩ.
The transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package. It has a power dissipation rating of 246 mW at 25°C ambient temperature. The NSV series prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. Its integrated design makes it suitable for various digital logic applications where space and component count are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVMMUN2217LT1G is 50 Vdc.
The continuous collector current (IC) rating for the NSVMMUN2217LT1G is 100 mAdc.
The power dissipation (PD) at 25°C ambient temperature is 246 mW.
The NSVMMUN2217LT1G is supplied in a SOT-23-3 (TO-236) surface-mount package.
The minimum DC current gain (hFE) is 35 at 5mA collector current and 10V collector-emitter voltage.
The Vce Saturation (Max) is 250mV at 1mA base current and 10mA collector current.
