| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 03 15 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMUN2211LT1 from ON Semiconductor is a preferred device Bias Resistor Transistor (BRT). This NPN silicon surface mount transistor integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and lowers component count.
Key electrical specifications include a collector-emitter voltage of 50V and a maximum collector current of 100mA. The device offers a minimum DC current gain (hFE) of 35 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA. It also includes an integrated resistor with a nominal value of 10 kΩ.
For thermal performance, the total device dissipation is rated at 246 mW at 25°C (on a minimum pad FR-4) and 400 mW at 25°C (on a 1.0 x 1.0 inch pad FR-4). The operating and storage temperature range is from -55°C to +150°C.
The MMUN2211LT1 is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for low-power applications where space is a constraint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 50 Vdc.
The maximum collector current is 100 mAdc.
The integrated resistor value is 10 kΩ.
The operating and storage temperature range is -55 to +150°C.
The MMUN2211LT1 is supplied in a SOT-23-3 (TO-236) package.
