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SMMUN2211LT3G The On Semiconductor SMMUN2211LT3G is a pre-biased NPN transistor designed for simplified circuit design and reduced board space. It features a SOT-23-3 package and operates at up to 50V.
Mfr Part #:

SMMUN2211LT3G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SMMUN2211LT3G is a pre-biased NPN transistor designed for simplified circuit design and reduced board space. It features a SOT-23-3 package and operates at up to 50V.
✓ Total Stock: 138,100 pcs
$ Price Range: $0.99

SMMUN2211LT3G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
130,000 pcs
On Request
130000 pcs On Request 1 On Request On Request 21+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
8,100 pcs
On Request
8100 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SMMUN2211LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Style
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SMMUN2211LT3G Description

Short technical summary and product information.

The SMMUN2211LT3G from On Semiconductor is a pre-biased NPN bipolar junction transistor (BJT) designed to integrate a transistor with its bias resistor network into a single component. This integration simplifies circuit design, reduces component count, and saves valuable board space.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. The device has a maximum power dissipation of 246mW. It also features a DC current gain (hFE) of at least 35 at 5mA/10V and a Vce saturation of 250mV maximum at 300µA/10mA.

 

The transistor incorporates a monolithic bias resistor network with R1 and R2 values of 10 kΩ. This internal network eliminates the need for external resistors, further streamlining the design.

 

The SMMUN2211LT3G is supplied in a surface-mount SOT-23-3 (TO-236) package, making it suitable for automated assembly processes. It is also RoHS compliant and halogen-free.

SMMUN2211LT3G Quick Information

Product Type: Pre-Biased NPN Transistor
Canonical Name: On Semiconductor SMMUN2211LT3G NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

SMMUN2211LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

SMMUN2211LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SMMUN2211LT3G Features

  • Pre-biased NPN transistor with integrated resistors.
  • Simplifies circuit design and reduces component count.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SOT-23-3 package.

SMMUN2211LT3G Applications

  • Ideal for digital logic circuits.
  • Suitable for signal switching applications.
  • Used in space-constrained designs.
  • Reduces overall system cost.

SMMUN2211LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage (VCEO) for the SMMUN2211LT3G?

The collector-emitter voltage (VCEO) for the SMMUN2211LT3G is 50 Vdc.

What is the continuous collector current (IC) rating of the SMMUN2211LT3G?

The continuous collector current (IC) rating for the SMMUN2211LT3G is 100 mAdc.

What is the package type for the SMMUN2211LT3G?

The SMMUN2211LT3G is available in a SOT-23-3 (TO-236) package.

What is the power dissipation of the SMMUN2211LT3G?

The SMMUN2211LT3G has a maximum power dissipation of 246 mW.

What is the DC Current Gain (hFE) for this transistor?

The minimum DC Current Gain (hFE) for the SMMUN2211LT3G is 35 at 5mA, 10V.

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