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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCV57090BDWR2G from On Semiconductor is a single-channel, isolated high current IGBT/MOSFET gate driver. It is designed for high power applications requiring efficiency and reliability.
Key electrical specifications include a high peak output current of +6.5 A/−6.5 A, a wide operating voltage range from 0V to 32V, and a nominal operating temperature range of -40°C to 125°C. The device features capacitive coupling technology, a propagation delay of 90ns, and a rise time of 13ns. It also boasts a high common mode transient immunity of 100kV/µs.
This gate driver is housed in an 8-SOIC package and utilizes surface mount technology. Its design is suitable for applications such as motor control, uninterruptible power supplies (UPS), automotive systems, industrial power supplies, and solar inverters.
The NCV57090BDWR2G is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. These compliance attributes make it suitable for various industrial and automotive designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCV57090BDWR2G has a high peak output current of +6.5 A/−6.5 A.
The operating voltage range for the NCV57090BDWR2G is 0V to 32V.
The NCV57090BDWR2G operates between -40°C and 125°C.
This gate driver is available in an 8-SOIC package.
The NCV57090BDWR2G is designed for surface mount installation.
