| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
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| Halogen Free | |
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| Military Grade | |
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The NCV57090FDWR2G from On Semiconductor is a high-current, single-channel IGBT/MOSFET gate driver featuring 5 kVrms internal galvanic isolation. Designed for high power applications, it ensures system efficiency and reliability.
This gate driver accommodates a wide range of input bias voltages and signal levels from 3.3 V to 20 V. It provides a high peak output current of +6.5 A/−6.5 A and features short propagation delays with accurate matching. The device operates over a temperature range of -40°C to 125°C.
Key electrical characteristics include a 0V to 32V operating voltage range, 100kV/µs common mode transient immunity, and 30ns maximum pulse width distortion. It utilizes capacitive coupling technology and is available in a surface-mount 8-SOIC package.
Typical applications for the NCV57090FDWR2G include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCV57090FDWR2G provides a peak output current of +6.5 A/−6.5 A.
This gate driver features 5 kVrms internal galvanic isolation.
The operating temperature range for the NCV57090FDWR2G is -40°C to 125°C.
The NCV57090FDWR2G is available in an 8-SOIC package.
The NCV57090FDWR2G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for this part is 1 Unlimited.