NCV57090FDWR2G The On Semiconductor NCV57090FDWR2G is a single-channel, isolated high current IGBT/MOSFET gate driver. It offers 6.5A peak output current and 5 kVrms internal galvanic isolation.
Mfr Part #:

NCV57090FDWR2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NCV57090FDWR2G is a single-channel, isolated high current IGBT/MOSFET gate driver. It offers 6.5A peak output current and 5 kVrms internal galvanic isolation.
Total Stock: 8,000 pcs
$ Price Range: $2.62

NCV57090FDWR2G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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8,000 pcs
8000 pcs On Request 1 On Request On Request On Request On Request On Request

NCV57090FDWR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Approval Agency
Automotive Grade
Common Mode Transient Immunity (Min)
Current
Halogen Free
Industrial Grade
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Number of Channels
Operating Temperature
Propagation Delay tpLH
Pulse Width Distortion (Max)
Rise
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Voltage

NCV57090FDWR2G Description

Short technical summary and product information.

The NCV57090FDWR2G from On Semiconductor is a high-current, single-channel IGBT/MOSFET gate driver featuring 5 kVrms internal galvanic isolation. Designed for high power applications, it ensures system efficiency and reliability.

 

This gate driver accommodates a wide range of input bias voltages and signal levels from 3.3 V to 20 V. It provides a high peak output current of +6.5 A/−6.5 A and features short propagation delays with accurate matching. The device operates over a temperature range of -40°C to 125°C.

 

Key electrical characteristics include a 0V to 32V operating voltage range, 100kV/µs common mode transient immunity, and 30ns maximum pulse width distortion. It utilizes capacitive coupling technology and is available in a surface-mount 8-SOIC package.

 

Typical applications for the NCV57090FDWR2G include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, and solar inverters.

NCV57090FDWR2G Quick Information

Product Type: Gate Driver
Canonical Name: NCV57090FDWR2G Isolated High Current IGBT/MOSFET Gate Driver
Subcategory: Isolators - Gate Drivers

NCV57090FDWR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NCV57090FDWR2G Estimated Pricing

Qty Low High
1+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

NCV57090FDWR2G Features

  • High peak output current of +6.5 A/−6.5 A.
  • Features 5 kVrms internal galvanic isolation.
  • Operates from 3.3 V to 20 V logic input.
  • Wide operating temperature range of -40°C to 125°C.
  • Surface mount 8-SOIC package.

NCV57090FDWR2G Applications

  • Used in motor control applications.
  • Suitable for uninterruptible power supplies.
  • Applicable for automotive systems.
  • Designed for industrial power supplies.
  • Ideal for solar inverters.

NCV57090FDWR2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the peak output current for the NCV57090FDWR2G?

The NCV57090FDWR2G provides a peak output current of +6.5 A/−6.5 A.

What is the galvanic isolation rating of this gate driver?

This gate driver features 5 kVrms internal galvanic isolation.

What is the operating temperature range for the NCV57090FDWR2G?

The operating temperature range for the NCV57090FDWR2G is -40°C to 125°C.

What package type is the NCV57090FDWR2G available in?

The NCV57090FDWR2G is available in an 8-SOIC package.

What is the RoHS status of the NCV57090FDWR2G?

The NCV57090FDWR2G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) for this part is 1 Unlimited.

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