SUD19N20-90
Vishay
The Vishay Dale SUD19N20-90 is an N-Channel MOSFET designed for primary side switching applications. It offers a 200V drain-source voltage and a continuous drain current of 19A.
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1,012 pcs
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1012 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE01P18K is a P-Channel MOSFET manufactured by NCE, designed for power management applications in portable and battery-operated systems. It features a drain-source voltage (VDS) of -100V and a continuous drain current (ID) of -18A.
Key electrical specifications include a maximum on-resistance (RDS(on)) of 100mΩ at a gate-source voltage (VGS) of -10V. This MOSFET utilizes advanced trench technology, contributing to its low on-resistance and low gate charge characteristics.
The component is housed in a TO-252 package, making it suitable for surface-mount applications. Its design is particularly well-suited for notebook power management and other battery-powered electronic systems where efficient power control is essential.
The NCE01P18K is a P-Channel enhancement mode power MOSFET utilizing advanced trench technology for low on-resistance and low gate charge.
It features a -100V drain-source voltage, -18A continuous drain current, and a maximum RDS(on) of 100mΩ at VGS = -10V.
The NCE01P18K MOSFET is available in a TO-252 package.
The NCE01P18K is best for notebook power management and battery-powered systems.
