| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The ON Semiconductor MTP8N50E is an N-Channel Power MOSFET. This component is housed in a TO-220 package, making it suitable for through-hole mounting.
Key electrical specifications include a maximum drain-source voltage of 500V and a typical drain-source on-resistance of 800mΩ. The maximum power dissipation is rated at 125W. The operating temperature range spans from -55°C to 150°C.
This MOSFET is designed for applications requiring high voltage and moderate power handling capabilities. Its TO-220 package facilitates ease of integration into circuit designs.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The typical drain-source on-resistance is 800mΩ.
The maximum power dissipation is 125W.
The operating temperature range is from -55°C to 150°C.
The MTP8N50E is supplied in a TO-220 package.