| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
576 pcs
|
576 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The CYSTEKEC MTB2D5N03BH8 is an N-Channel Logic Level Enhancement Mode Power MOSFET designed for various applications. It features a drain-source breakdown voltage (BVDSS) of 30V. The continuous drain current (ID) is rated at 60A when VGS is 10V and the case temperature is 25°C, and 20A when the ambient temperature is 25°C.
This MOSFET exhibits low on-resistance, with a typical value of 2.1 mΩ at VGS=10V and ID=30A, and 2.9 mΩ at VGS=4.5V and ID=24A. It supports a gate-source voltage (VGS) of up to ±20V and has a gate threshold voltage (VTH) of 2V. The component is housed in a QFN8 (5x6) package and is suitable for surface mount applications.
Additional features include Pb-free lead plating and a halogen-free package, indicating compliance with environmental standards. The device is designed for single drive requirements and offers fast switching characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The continuous drain current is 60A.
The typical on-resistance is 2.1 mΩ.
The package type is QFN8 (5x6).
Yes, it features Pb-free lead plating and a halogen-free package.