HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF475 is an RF Power Transistor from Motorola Semiconductor, designed for high-frequency applications. This component features a maximum collector current of 4A and a maximum collector emitter voltage of 18V. Its maximum power dissipation is rated at 10W, with a maximum operating temperature of 150°C.
As a bipolar junction transistor (BJT), the MRF475 is suitable for various RF power amplification and switching tasks. Its specifications make it a component for designs requiring robust performance in radio frequency circuits.
This transistor belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. While specific packaging and mounting details are not provided in the available data, its electrical characteristics are well-defined for its intended applications.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MRF475 is 4A.
The maximum collector emitter voltage for the MRF475 is 18V.
The maximum power dissipation for the MRF475 is 10W.
The maximum operating temperature for the MRF475 is 150°C.
The RoHS status of the MRF475 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRF475 is 1 Unlimited.
The REACH status for the MRF475 is REACH Unaffected.
