HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF329 is a BROADBAND RF POWER TRANSISTOR from Motorola Semiconductor. This component is designed for RF power applications, featuring a maximum collector current of 9A and a collector-emitter voltage rating of 30V.
With a maximum power dissipation of 270W and a maximum operating temperature of 150°C, the MRF329 is suitable for demanding RF power circuits. It has 4 terminals, indicating a specific package configuration designed for thermal management and electrical performance in RF applications.
This transistor is part of the RF Power Transistor category, suggesting its use in areas such as radio transmitters, power amplifiers, and other high-frequency power applications where robust performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.20 | $8.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MRF329 is 9A.
The maximum collector emitter voltage for the MRF329 is 30V.
The maximum power dissipation for the MRF329 is 270W.
The maximum operating temperature for the MRF329 is 150°C.
The MRF329 has 4 terminals.
