15GN03FA-TL-H
On Semiconductor
NPN RF transistor from On Semiconductor with 10V VCEO, 70mA collector current, and 1.5GHz typical gain-bandwidth product. Housed in a compact SSFP (SC-81) surface-mount package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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698 pcs
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698 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The MMBTH10LT1 is an NPN silicon transistor designed for VHF and UHF applications. Manufactured by onsemi, this component offers a maximum collector-emitter voltage (VCEO) of 25V and a collector-base voltage (VCBO) of 30V. It operates with an emitter-base voltage (VEBO) of up to 3.0V.
Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 240 at 4.0 mAdc and 10V VCE. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.5V, and the base-emitter on voltage (VBE) is a maximum of 0.95V under specified conditions. Thermal performance is supported by a total device dissipation of 225mW on an FR-5 board and 300mW on an alumina substrate at 25°C.
This transistor is supplied in a compact SOT-23 package, suitable for surface mounting. It is also noted as being Pb-free and Halogen-free, aligning with environmental compliance standards. The device is rated for a junction and storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBTH10LT1 is 25 Vdc.
The DC current gain (hFE) for the MMBTH10LT1 is a minimum of 60 and a maximum of 240 when measured at 4.0 mAdc and 10V VCE.
The MMBTH10LT1 is supplied in a SOT-23 package.
The junction and storage temperature range for the MMBTH10LT1 is -55°C to +150°C.
