MMBT5551LT1 The MMBT5551LT1 is an NPN Silicon High Voltage Transistor from ON Semiconductor. It is supplied in a SOT-23 package.
Mfr Part #:

MMBT5551LT1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT5551LT1 is an NPN Silicon High Voltage Transistor from ON Semiconductor. It is supplied in a SOT-23 package.
✓ Total Stock: 2,373 pcs
$ Price Range: $0.11

MMBT5551LT1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,785 pcs
1785 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
588 pcs
588 pcs On Request 1 On Request On Request On Request On Request On Request

MMBT5551LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Storage Temperature
Tape & Reel

MMBT5551LT1 Description

Short technical summary and product information.

The MMBT5551LT1 is a high voltage NPN silicon transistor manufactured by ON Semiconductor. It is designed for applications requiring high voltage capabilities, with a Collector-Emitter Voltage (VCEO) of up to 160V and a continuous Collector Current (IC) of 600mA.

 

This transistor features a DC Current Gain (hFE) ranging from 80 to 250 depending on the operating conditions. It is housed in a compact SOT-23 (TO-236) package, making it suitable for space-constrained designs. The device operates within a junction and storage temperature range of -55°C to +150°C.

 

Key electrical characteristics include a Collector-Base Breakdown Voltage (VCBO) of 180V and an Emitter-Base Breakdown Voltage (VEBO) of 6.0V. The transistor also exhibits low cutoff currents, with Collector Cutoff Current (ICBO) typically 50 nAdc at 120V.

 

The MMBT5551LT1 is available in Pb-Free packages and is supplied on tape and reel for automated assembly processes. Its robust specifications make it a reliable choice for various electronic circuits.

MMBT5551LT1 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBT5551LT1 NPN Silicon High Voltage Transistor
Subcategory: Single

MMBT5551LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBT5551LT1 Estimated Pricing

Qty Low High
1+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT5551LT1 Features

  • High voltage NPN silicon transistor
  • 160V Collector-Emitter Voltage (VCEO)
  • 600mA Continuous Collector Current (IC)
  • SOT-23 package for surface mounting
  • Pb-Free package available

MMBT5551LT1 Applications

  • Suitable for high voltage circuits
  • Ideal for general purpose amplification
  • Used in switching applications
  • Compact design for space saving

MMBT5551LT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the MMBT5551LT1?

The maximum collector-emitter voltage (VCEO) is 160 Vdc.

What is the package type for this transistor?

The MMBT5551LT1 is packaged in a SOT-23 surface-mount package.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is 600 mAdc.

What is the DC current gain (hFE) at 1 mA?

The minimum DC current gain (hFE) is 80 at IC = 1.0 mAdc and VCE = 5.0 Vdc.

Is the MMBT5551LT1 lead-free?

Yes, the device is lead-free (Pb-Free) as per the datasheet.

What is the power dissipation on an FR-5 board?

The maximum power dissipation is 225 mW on an FR-5 board.

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