SIR428DP-T1-GE3 The Vishay Siliconix SIR428DP-T1-GE3 is an N-channel MOSFET designed for various applications. It features a 30V drain-source voltage and 17.4A continuous drain current.
Mfr Part #:

SIR428DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SIR428DP-T1-GE3 is an N-channel MOSFET designed for various applications. It features a 30V drain-source voltage and 17.4A continuous drain current.
Total Stock: 153,467 pcs
$ Price Range: $2.81

SIR428DP-T1-GE3 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
150,667 pcs
150667 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,800 pcs
2800 pcs On Request 1 On Request On Request 12+ On Request On Request

SIR428DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Lead Style
Mounting Type
Operating Temperature
SVHC Present
Storage Temperature
Tape & Reel

SIR428DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SIR428DP-T1-GE3 is an N-channel MOSFET with a maximum continuous drain current of 17.4A and a maximum drain-source voltage of 30V. It has a typical RDS(on) of 7.5 mOhm at 10V, with typical rise and fall times of 11 ns and 9 ns respectively. The device operates over a temperature range of -55 to 150 °C.

 

This MOSFET is housed in an 8-Pin PowerPAK SO package and is designed for surface mounting. Its typical turn-on delay time is 16 ns, and turn-off delay time is 18 ns. The component is suitable for applications requiring efficient power switching and control.

 

Key electrical characteristics include a ±20V maximum gate-source voltage. The SIR428DP-T1-GE3 is manufactured by Vishay Siliconix, a recognized leader in semiconductor components.

SIR428DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: SIR
Canonical Name: Vishay Siliconix SIR428DP-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SIR428DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIR428DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR428DP-T1-GE3 Features

  • 30V maximum drain-source voltage
  • 17.4A maximum continuous drain current
  • 7.5 mOhm typical RDS(on) at 10V
  • Surface mount 8-Pin PowerPAK SO package
  • Wide -55 to 150 °C operating temperature

SIR428DP-T1-GE3 Applications

  • Efficient power switching applications
  • General purpose MOSFET usage
  • Power management circuits
  • Electronic control systems

SIR428DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIR428DP-T1-GE3?

The maximum drain-source voltage is 30 V.

What is the continuous drain current rating?

The maximum continuous drain current is 17.4 A.

What is the typical RDS(on) value?

The typical RDS(on) is 7.5 mOhm at 10V.

What is the operating temperature range?

The operating temperature range is -55 to 150 °C.

What package type is the SIR428DP-T1-GE3 in?

It is in an 8-Pin PowerPAK SO package.

How is the SIR428DP-T1-GE3 mounted?

It is a surface mount device.

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