| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The MMBT3906LT1 is a PNP Silicon General Purpose Transistor manufactured by ON Semiconductor. This device is designed for a wide range of electronic applications requiring a reliable bipolar junction transistor.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of -40V and a continuous Collector Current (IC) of -200mA. The transistor exhibits a high Current Gain Bandwidth Product (fT) of 250MHz, making it suitable for high-frequency applications. It also features low output and input capacitance, with Cobo at 4.5pF and Cibo at 10pF respectively.
The MMBT3906LT1 is housed in a compact SOT-23 surface-mount package, facilitating integration into dense circuit designs. The device is available on tape and reel, with a standard package quantity of 3000 units, suitable for both prototype and mass production.
This transistor operates within a junction and storage temperature range of -55°C to +150°C. It is also noted as being Pb-Free, indicating compliance with environmental standards for reduced hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is -200 mAdc.
The minimum collector-emitter breakdown voltage is -40 Vdc at IC = -1.0 mAdc.
The MMBT3906LT1 is available in a surface-mount SOT-23 package.
The junction and storage temperature range is -55°C to +150°C.
The minimum DC current gain is 100 at IC = -10 mAdc and VCE = -1.0 Vdc.
The maximum power dissipation is 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C.
RoHS compliance is unverified.