MMBFJ309LT1G
On Semiconductor
The ON Semiconductor MMBFJ309LT1G is an N-Channel JFET transistor designed for RF applications. It comes in a compact SOT-23 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,007 pcs
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1007 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
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The MMBFJ310LT1 is an N-Channel JFET transistor manufactured by ON Semiconductor, designed for VHF and UHF amplifier applications. This device offers a Drain-Source Voltage rating of 25V and a Gate-Source Voltage rating of 25V.
Key electrical characteristics include a Zero-Gate-Voltage Drain Current (IDSS) ranging from 12 to 30 mAdc for the MMBFJ309 variant and 24 to 60 mAdc for the MMBFJ310 variant, both measured at VDS = 10V. The Forward Transfer Admittance (|Yfs|) is specified between 8.0 and 18 mmho at 10 mAdc and 1.0 kHz.
This JFET is housed in a compact SOT-23 (TO-236) surface-mount package. It is Pb-Free and Halogen Free, complying with RoHS standards. The device is suitable for applications requiring high-frequency amplification.
Additional specifications include a maximum Gate Current of 10 mAdc, a maximum Junction-to-Ambient thermal resistance of 556 °C/W, and operating and storage temperatures ranging from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBFJ310LT1 is housed in a SOT-23 package.
The maximum drain-source voltage is 25 Vdc.
The maximum gate current is 10 mAdc.
The device operates within a temperature range of -55°C to +150°C.
Yes, the device is RoHS3 compliant.
Yes, the device is halogen free and BFR free.