MMBFJ309LT1G The ON Semiconductor MMBFJ309LT1G is an N-Channel JFET transistor designed for RF applications. It comes in a compact SOT-23 package.
Mfr Part #:

MMBFJ309LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBFJ309LT1G is an N-Channel JFET transistor designed for RF applications. It comes in a compact SOT-23 package.
✓ Total Stock: 116,141 pcs
$ Price Range: $0.99

MMBFJ309LT1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

MMBFJ309LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current Rating (Amps)
Halogen Free
Input Capacitance
Lead Spacing
Mounting Type
Supplier Device Package
Technology
Voltage

MMBFJ309LT1G Description

Short technical summary and product information.

The ON Semiconductor MMBFJ309LT1G is an N-Channel JFET transistor suitable for VHF/UHF amplifier applications. It features interchangeable drain and source terminals and a maximum drain-source voltage of 25V.

 

This device offers a maximum gate current of 10 mAdc and a zero-gate-voltage drain current (IDSS) ranging from 30mA to 60mAdc. The forward transfer admittance (|Yfs|) is specified between 8 to 18 mmho at 10 mAdc and 1 kHz. Input capacitance (Ciss) is a maximum of 5 pF and reverse transfer capacitance (Crss) is a maximum of 2.5 pF.

 

Packaged in a SOT-23-3 (TO-236) surface-mount case, the MMBFJ309LT1G is supplied on tape and reel with 3,000 units per reel. It is Pb-free and Halogen-free, meeting RoHS3 compliance standards. The operating and storage temperature range is -55°C to +150°C.

 

This JFET is ideal for RF amplifier circuits where its specific characteristics, such as transconductance and low capacitance, are beneficial. The SOT-23 package allows for compact circuit designs.

MMBFJ309LT1G Quick Information

Product Type: JFET Transistor
Canonical Name: MMBFJ309LT1G N-Channel JFET VHF/UHF Amplifier Transistor
Subcategory: RF

MMBFJ309LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBFJ309LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBFJ309LT1G Features

  • N-Channel JFET for RF applications.
  • Maximum drain-source voltage is 25V.
  • Zero-gate drain current up to 60mA.
  • Surface mount SOT-23-3 package.
  • Pb-free and Halogen-free construction.

MMBFJ309LT1G Applications

  • Used in RF signal amplification circuits
  • Suitable for impedance matching networks
  • Ideal for RF front-end modules
  • Applicable in low-noise RF applications

MMBFJ309LT1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the MMBFJ309LT1G?

The maximum drain-source voltage (VDS) for the MMBFJ309LT1G is 25 Vdc.

What is the package type for the MMBFJ309LT1G?

The MMBFJ309LT1G is supplied in a SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range for this JFET?

The junction and storage temperature range for the MMBFJ309LT1G is -55°C to +150°C.

Is the MMBFJ309LT1G RoHS compliant?

Yes, the MMBFJ309LT1G is RoHS3 compliant.

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