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MMBFJ310LT3G The ON Semiconductor MMBFJ310LT3G is an N-Channel JFET transistor designed for RF applications. It comes in a compact SOT-23 package.
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MMBFJ310LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBFJ310LT3G is an N-Channel JFET transistor designed for RF applications. It comes in a compact SOT-23 package.
✓ Total Stock: 30,000 pcs
$ Price Range: $0.99

MMBFJ310LT3G Available from 1 distributor

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✓ Non-Authorised
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30,000 pcs
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MMBFJ310LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Current Rating (Amps)
Gain
Halogen Free
Input Capacitance
Mounting Type
Supplier Device Package
Tape & Reel
Technology
Voltage
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MMBFJ310LT3G Description

Short technical summary and product information.

The ON Semiconductor MMBFJ310LT3G is an N-Channel JFET transistor suitable for VHF/UHF amplifier applications. It features a drain-source voltage rating of 25 Vdc and a gate-source voltage rating of 25 Vdc. The device can handle a gate current of up to 10 mAdc.

 

Key electrical characteristics include a zero-gate-voltage drain current (IDSS) ranging from 12 to 30 mAdc and a forward transfer admittance (|Yfs|) between 8.0 and 18 mmhos at 10 mAdc and 1.0 kHz. The input capacitance (Ciss) is a maximum of 5.0 pF, and the reverse transfer capacitance (Crss) is a maximum of 2.5 pF, measured at 1.0 MHz.

 

This JFET is housed in a SOT-23-3 (TO-236-3, SC-59) surface mount package, making it ideal for space-constrained designs. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, indicating its suitability for environmentally conscious manufacturing processes.

MMBFJ310LT3G Quick Information

Product Type: JFET Transistor
Canonical Name: N-Channel JFET VHF/UHF Amplifier Transistor
Subcategory: RF FETs/MOSFETs

MMBFJ310LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBFJ310LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBFJ310LT3G Features

  • N-Channel JFET for RF amplification.
  • 25 Vdc drain-source voltage rating.
  • 10 mAdc maximum gate current.
  • SOT-23 surface mount package.
  • RoHS, Halogen, and Pb-Free compliant.

MMBFJ310LT3G Applications

  • Suitable for RF amplifier circuits.
  • Used in high-frequency switching applications.
  • Ideal for low-voltage signal switching.
  • Applicable in automotive RF modules.

MMBFJ310LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the MMBFJ310LT3G?

The maximum drain-source voltage is 25 Vdc.

What package type is the MMBFJ310LT3G supplied in?

The MMBFJ310LT3G is supplied in a SOT-23-3 (TO-236-3, SC-59) surface mount package.

What is the RoHS status of the MMBFJ310LT3G?

The MMBFJ310LT3G is RoHS3 Compliant.

What is the typical zero-gate-voltage drain current (IDSS) for the MMBFJ310LT3G?

The zero-gate-voltage drain current (IDSS) ranges from 12 to 30 mAdc for the MMBFJ309 variant and 24 to 60 mAdc for the MMBFJ310 variant, under the condition VDS = 10 Vdc, VGS = 0.

What is the input capacitance (Ciss) of the MMBFJ310LT3G?

The input capacitance (Ciss) is a maximum of 5.0 pF, measured at VGS = -10 Vdc, VDS = 0 Vdc, and f = 1.0 MHz.

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