| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,131 pcs
|
10131 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
8,720 pcs
|
8720 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Transistor Type |
The MJD122 is a high-performance NPN Darlington Transistor from Changjing Electronics Technology, designed for various electronic applications. This component features a maximum collector-emitter breakdown voltage of 100V and can handle a continuous collector current of up to 8A. Its maximum power dissipation is rated at 1.5W.
The transistor is housed in a TO-251 (I-PAK) package, suitable for through-hole mounting. The MJD122 is part of the Darlington Transistor family, known for their high current gain.
This device is suitable for applications requiring high current amplification and switching capabilities. Its specifications make it a versatile component for power control and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MJD122 is 8A.
The collector-emitter breakdown voltage of the MJD122 is 100V.
The MJD122 is supplied in a TO-251 (I-PAK) package.
The maximum power dissipation for the MJD122 is 1.5W.