| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,287,273 pcs
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3287273 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC2712-GR is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA.
This transistor operates with a maximum power dissipation of 150mW and has a transition frequency of 80MHz. The DC current gain (hFE) is a minimum of 70 at 2mA and 6V. It is packaged in an S-Mini surface mount package (TO-236-3, SC-59, SOT-23-3).
The operating temperature range extends up to 125°C (TJ). The Vce saturation is typically 250mV at 10mA collector current and 100mA base current, with a collector cutoff current of 100nA (ICBO).
This component is RoHS3 compliant and comes in a Moisture Sensitivity Level 1 (Unlimited) rating. Its compact S-Mini package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50 V.
The maximum collector current is 150 mA.
The transition frequency is 80 MHz.
The operating temperature is up to 125°C (TJ).
The 2SC2712-GR is an NPN bipolar transistor.
It is in a TO-236-3, SC-59, SOT-23-3 (S-Mini) surface mount package.
