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2SC3326-A The Toshiba 2SC3326-A is an NPN bipolar junction transistor designed for RF applications. It features a 20V collector-emitter breakdown voltage and a 300mA maximum collector current.
Mfr Part #:

2SC3326-A

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SC3326-A is an NPN bipolar junction transistor designed for RF applications. It features a 20V collector-emitter breakdown voltage and a 300mA maximum collector current.
✓ Total Stock: 7,100 pcs
$ Price Range: $0.24

2SC3326-A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,100 pcs
On Request
7100 pcs On Request 1 On Request On Request 2013 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2SC3326-A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SC3326-A Description

Short technical summary and product information.

The Toshiba 2SC3326-A is an NPN bipolar junction transistor (BJT) suitable for RF applications. It offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 300mA.

 

This transistor has a maximum power dissipation of 150mW and a transition frequency of 30MHz. The Vce saturation is specified at 100mV maximum under specific base and collector current conditions (3mA Ib, 30mA Ic). The DC current gain (hFE) is a minimum of 200 at 4mA collector current and 2V collector-emitter voltage.

 

Designed for surface mounting, the 2SC3326-A comes in a TO-236-3, SC-59, or SOT-23-3 package. It operates at temperatures up to 125°C (TJ). The component is RoHS3 compliant.

 

This part is ideal for use in various communication circuits and other electronic designs requiring a general-purpose NPN RF transistor.

2SC3326-A Quick Information

Product Type: NPN Bipolar Junction Transistor
Canonical Name: Toshiba 2SC3326-A NPN Bipolar Junction Transistor
Subcategory: Bipolar Junction Transistor (BJT)

2SC3326-A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SC3326-A Estimated Pricing

Qty Low High
1+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SC3326-A Features

  • NPN bipolar junction transistor for RF applications.
  • 20V collector-emitter breakdown voltage.
  • 300mA maximum collector current.
  • 30MHz transition frequency.
  • Surface mount TO-236 package.

2SC3326-A Applications

  • Suitable for RF amplifier circuits.
  • Used in communication systems.
  • General purpose switching applications.
  • Low noise signal amplification.

2SC3326-A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2SC3326-A?

The collector-emitter breakdown voltage is 20V.

What is the maximum collector current for the 2SC3326-A?

The maximum collector current is 300mA.

What is the transition frequency of the 2SC3326-A?

The transition frequency is 30MHz.

What is the operating temperature range for the 2SC3326-A?

The operating temperature is up to 125°C (TJ).

What type of package is the 2SC3326-A in?

The package is TO-236-3, SC-59, SOT-23-3.

How is the 2SC3326-A mounted?

It is a surface mount device.

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