| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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403 pcs
|
403 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Transistor Type |
The MJD122 is an NPN Darlington Transistor from Changjing Electronics Technology, designed for various electronic applications. This component features a collector-emitter breakdown voltage of 100V and can handle a maximum collector current of 8A. It is supplied in a TO-251 (I-PAK) package, suitable for through-hole mounting.
With a maximum power dissipation of 1.5W, the MJD122 is a robust choice for power switching and amplification circuits. Its NPN bipolar transistor configuration makes it a versatile component in discrete semiconductor applications. The device is RoHS3 compliant, indicating adherence to environmental standards.
This transistor is part of the Darlington Transistor product category. Its specifications make it suitable for applications requiring moderate voltage and current handling capabilities. The TO-251 package offers a compact footprint for integration into electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage of the MJD122 is 100V.
The MJD122 has a maximum collector current of 8A.
The MJD122 is supplied in a TO-251 (I-PAK) package.
The MJD122 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MJD122 is 1 Unlimited.
