| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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812 pcs
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812 pcs | On Request | 1 | On Request | On Request | 96 | On Request | On Request |
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The MJ2955 is a complementary PNP silicon power transistor manufactured by Motorola Semiconductor, housed in a JEDEC TO-3 metal case. It is designed for applications such as power switching circuits, series and shunt regulators, output stages, and high-fidelity amplifiers.
Key electrical characteristics include a maximum Collector-Base Voltage (VCBO) of 100V and a maximum Collector Current (IC) of 15A. The device offers a maximum Total Power Dissipation (Ptot) of 115W at 25°C. The thermal resistance from junction to case is a maximum of 1.5°C/W.
Electrical specifications include a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 60V and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1V at 4A collector current and 400mA base current. The DC Current Gain (hFE) is a minimum of 20 at 4A collector current and 4A collector-emitter voltage.
The transistor operates within a storage temperature range of -65 to 200°C and a maximum operating junction temperature of 200°C. Its complementary NPN type is the 2N3055.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (VCBO) for the MJ2955 is 100V.
The maximum Collector Current (IC) for the MJ2955 is 15A.
The maximum Total Power Dissipation (Ptot) for the MJ2955 is 115W at temperatures up to 25°C.
The MJ2955 transistor is supplied in a TO-3 metal case.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.