BSP372NH6327
Infineon
The Infineon BSP372NH6327 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 1.8A. It features a surface mount TO-261-4 package.
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1,505 pcs
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1505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Magnachip Semiconductor MDD1502RH is a single N-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Ids) of 20.4A at 25°C. The device exhibits a low maximum on-resistance (Rds(on)) of 8.5mOhm when driven with a gate-source voltage (Vgs) of 10V, and a typical gate charge (Qg) of 14.3nC at 10V.
This MOSFET is housed in a DPAK surface-mount package, making it suitable for applications requiring efficient power handling in a compact form factor. The typical gate-source threshold voltage (Vgs(th)) is 2.7V, and it has a typical gate-source charge (Qgs) of 2.6nC and a typical gate-drain charge (Qgd) of 2.3nC.
This component is part of Magnachip's MXT MOSFETs series, which are optimized for power consumption management. Its specifications make it suitable for various power conversion and switching applications where reliable performance and thermal management are critical.
| Qty | Low | High |
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| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 20.4A at 25°C.
The drain-source on-resistance is a maximum of 8.5mOhm at Vgs=10V.
The MDD1502RH is supplied in a DPAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.