BSP372NH6327 The Infineon BSP372NH6327 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 1.8A. It features a surface mount TO-261-4 package.
Mfr Part #:

BSP372NH6327

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon BSP372NH6327 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 1.8A. It features a surface mount TO-261-4 package.
✓ Total Stock: 4,039 pcs
$ Price Range: $0.99

BSP372NH6327 Available from 3 distributors

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2,886 pcs
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1,110 pcs
1110 pcs On Request 1 On Request On Request 2021+ On Request On Request
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43 pcs
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BSP372NH6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Gate Charge
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Supplier Device Package
Technology

BSP372NH6327 Description

Short technical summary and product information.

The Infineon BSP372NH6327 is an N-Channel MOSFET from the OptiMOS series, designed for various electronic applications. It offers a drain-source breakdown voltage (Vds) of 100V and a continuous drain current (Id) of 1.8A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 230mOhm at 1.8A and 10V gate drive voltage. The gate charge (Qg) is a maximum of 14.3nC at 10V, and the input capacitance (Ciss) is 329pF at 25V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a TO-261-4, TO-261AA package, suitable for surface mounting. Its technology is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). The drive voltage range is specified from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 1.8V at 218µA.

 

The BSP372NH6327 has a maximum power dissipation of 1.8W at 25°C. It is classified under RoHS3 compliance and is REACH unaffected.

BSP372NH6327 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon BSP372NH6327 N-Channel MOSFET
Subcategory: N-Channel

BSP372NH6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSP372NH6327 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP372NH6327 Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current of 1.8A at 25°C.
  • Low on-resistance of 230mOhm at 1.8A/10V.
  • Surface mount TO-261-4 package for easy integration.
  • Operates within -55°C to 150°C temperature range.

BSP372NH6327 Applications

  • Used in RF signal filtering circuits
  • Suitable for high-frequency switching
  • Ideal for RF communication equipment
  • Applicable in transmitters and receivers

BSP372NH6327 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the BSP372NH6327?

The drain-source voltage (Vds) for the BSP372NH6327 is 100V.

What is the continuous drain current of the BSP372NH6327?

The continuous drain current (Id) at 25°C for the BSP372NH6327 is 1.8A.

What is the on-resistance of the BSP372NH6327?

The maximum on-resistance (Rds On) for the BSP372NH6327 is 230mOhm when measured at 1.8A drain current and 10V gate-source voltage.

What package type is the BSP372NH6327 available in?

The BSP372NH6327 is available in a TO-261-4, TO-261AA package, which is a surface mount type.

What is the operating temperature range for the BSP372NH6327?

The operating temperature range for the BSP372NH6327 is -55°C to 150°C.

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